【研究成果】2014年

研究成果79

Fabrication of low-curvature 2 in. GaN wafers by Na-flux coalescence growth technique
Mamoru Imade, Masayuki Imanishi, Yuma Todoroki, Hiroki Imabayashi, Daisuke Matsuo, Kosuke Murakami, Hideo Takazawa, Akira Kitamoto, Mihoko Maruyama, Masashi Yoshimura, and Yusuke Mori
Applied Physics Express 7, 035503 (2014)

Low-curvature and large-diameter GaN wafers are in high demand for the development of GaN-based electronic devices. Recently, we have proposed the coalescence growth of GaN by the Na-flux method and demonstrated the possibility of enlarging the diameter of high-quality GaN crystals. In the present study, 2 in. GaN wafers with a radius of curvature larger than 100m were successfully produced by the Na-flux coalescence growth technique. FWHMs of the 002 and 102 GaN X-ray rocking curves were below 30.6 arcsec, and the dislocation density was less than the order of 10²cm^-2 for the entire area of the wafer.